| PART |
Description |
Maker |
| IXGH10N100U1 IXGH10N100AU1 |
Low VCE(sat) IGBT with Diode, High speed IGBT with Diode
|
IXYS[IXYS Corporation]
|
| IXGH25N100AU1 |
High speed IGBT with Diode 50 A, 1000 V, N-CHANNEL IGBT, TO-247AD
|
IXYS, Corp.
|
| BUP307D Q67040-A4221-A2 BUP307-D |
IGBT Duopack (IGBT with Antiparallel ...
From old datasheet system
IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) 由于IGBT的反平行二极管（低正向压降高开关速度低尾电流的无闩锁包括快速滑行二极管
|
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Sanyo Electric Co., Ltd.
|
| IXGM17N100 IXGH17N100 IXGH17N100A IXGM17N100A |
3.5V diode
Low V IGBT High speed IGBT
|
IXYS Corporation
|
| IXST30N60B2D1 |
High Speed IGBT with Diode
|
IXYS
|
| IXGH25N100AU1 IXGH25N100U1 |
High speed IGBT with Diode
|
IXYS Corporation
|
| IRS2332JTRPBF IRS2330D |
High Voltage High Speed power MOSFET and IGBT Driver. Compatible down to 3.3V Logic. Deadtime 0.7us.
High Voltage High Speed power MOSFET and IGBT Driver with Integrated Bootstrap Diode. Compatible down to 3.3V Logic. Deadtime 2.0us.
|
International Rectifier
|
| IKP20N65F5 |
high power thyristor diode
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IKW40N65H5 PG-TO247-3 |
650V DuoPack IGBT and Diode High speed switching series fifth generation
|
Infineon Technologies AG
Infineon Technologies A...
|
| IXGH50N60B2 IXGT50N60B2 |
IGBT Discretes: Mid-Frequency Range (15KHz-40KHz) Types Single IGBT
HiPerFASTTM IGBT B2-Class High Speed IGBTs
|
IXYS Corporation
|
| MG300Q2YS65H |
300 A, 1200 V, N-CHANNEL IGBT
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
TOSHIBA IGBT Module Silicon N Channel IGBT
|
Toshiba Semiconductor
Toshiba Corporation
|
| MG200Q2YS65H |
IGBT Module Silicon N Channel IGBT High Power & High Speed Switching Applications
|
Toshiba Semiconductor
Mitsubishi Electric Semiconductor
Toshiba Corporation
|
